AO3421E 30v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -3a r ds(on) (at v gs =-10v) < 95m w r ds(on) (at v gs =-4.5v) < 160m w typical esd protection hbm class 2 symbol v ds the AO3421E combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. -30v drain-source voltage -30 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted sot23 top view bottom view d g s g s d s g d v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl units parameter typ max c/w r q ja 70 90 maximum junction-to-ambient a maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 63 125 80 100 a i d -3 -2 -18 v 20 gate-source voltage t a =25c t a =70c continuous drain current pulsed drain current c c thermal characteristics power dissipation b p d t a =25c w 1.4 0.9 t a =70c junction and storage temperature range -55 to 150 rev 0: april 2012 www.aosmd.com page 1 of 5
AO3421E symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -1.4 -2 -2.5 v i d(on) -18 a 78 95 t j =125c 112 135 120 160 m w g fs 6 s v sd -0.8 -1 v i s -1.5 a c iss 215 pf c oss 46.5 pf c rss 27.5 pf r g 9.5 19 w q g (10v) 4.6 8 nc q g (4.5v) 2.2 4 nc q gs 0.85 nc q gd 1.2 nc t d(on) 8 ns t 4 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-3a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs =16v zero gate voltage drain current gate-body leakage current m w i s =-1a,v gs =0v v ds =-5v, i d =-3a v gs =-4.5v, i d =-2a forward transconductance diode forward voltage turn-on rise time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v =-10v, v =-15v, r =5 w , reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-15v, i d =-3a gate source charge gate drain charge total gate charge t r 4 ns t d(off) 13.5 ns t f 4 ns t rr 9 ns q rr 16 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-3a, di/dt=500a/ m s turn-on rise time turn-off delaytime i f =-3a, di/dt=500a/ m s turn-off fall time v gs =-10v, v ds =-15v, r l =5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 0: april 2012 www.aosmd.com page 2 of 5
AO3421E typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 70 80 90 100 110 120 130 140 150 0 1 2 3 4 5 6 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-2a v gs =-10v i d =-3a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.0v -4v -6v -7v -10v -4.5v -5v -3.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 50 70 90 110 130 150 170 190 210 230 250 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-3a 25 c 125 c rev 0: april 2012 www.aosmd.com page 3 of 5
AO3421E typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-3a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =125 c/w rev 0: april 2012 www.aosmd.com page 4 of 5
AO3421E vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 0: april 2012 www.aosmd.com page 5 of 5
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